DIODES INC. P Channel Power MOSFET 60V 18.2A 0.028 Ohm SOT-223

The DIODES INC. P Channel Power MOSFET is an enhancement mode device designed to minimise on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal choice for high-efficiency power management applications, providing reliable and efficient operation where power conservation and rapid switching are essential.

Key Features

• P-channel enhancement mode
• Low on-resistance (0.028 Ohm max)
• Fast switching speed
• Low threshold and low gate drive
• Low input capacitance
• Surface mount SOT-223 package

This MOSFET delivers a drain-source voltage of -60V and a gate-source voltage of ±20V at TA = +25°C. It supports a continuous drain current of -7A at TA = +25°C (VGS = -10V), and a pulsed drain current of -50A (10µs pulse, 1% duty cycle). The total power dissipation is 2W at an ambient temperature of +25°C, with a maximum power dissipation of 17.3W. The operating and storage temperature ranges from -55°C to +150°C, ensuring durability in demanding environments. Weighing just 1.85 grams with dimensions of 43 x 33 x 15mm, its compact SOT-223 surface mount design makes it suitable for automated assembly and space-constrained electronic designs.

Applications

Specifically engineered for power management, this component excels in DC-DC converters, backlighting applications, and general power management functions. Its low resistance and efficient switching make it a versatile addition to your circuit designs.