Infineon 256Kbit I2C FRAM NVRAM, 8-Pin SOIC

The Infineon 256Kbit I2C FRAM NVRAM is a high-performance non-volatile memory device housed in an 8-pin SOIC package. Offering a memory configuration of 32K x 8bit, this ferroelectric random access memory reads and writes similarly to standard RAM, providing reliable data retention for 151 years without the complexities, overhead, and system-level reliability problems associated with EEPROM.

Unlike EEPROM, this FRAM performs write operations at bus speed, meaning no write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device, allowing the next bus cycle to commence without data polling. Additionally, the device offers substantial write endurance of 100 trillion (10^14) read/write cycles, making it a robust hardware drop-in replacement for serial I2C EEPROM.

Key Features and Specifications

• 256Kbit memory size with 32K x 8bit configuration
• Advanced high-reliability ferroelectric process
• High endurance: 100 trillion (10^14) read/writes
• Up to 1MHz frequency, with support for legacy 100KHz and 400KHz timings
• Low power consumption: 100μA active current at 100KHz and 15μA typical standby current
• Wide operating voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to 85°C

This NVRAM is designed for applications requiring high endurance and fast, reliable data writes, combining the benefits of non-volatile storage with the speed of RAM.