Infineon BSS83P OptiMOS™ P-Channel Power MOSFET, 60V, 330mA, SOT-23

The Infineon BSS83P H6327 OptiMOS™ P-channel Power MOSFET is engineered to consistently meet the highest standards of quality and performance, focusing on key specifications essential for efficient power system design. This includes superior ON-state resistance and figure of merit characteristics, ensuring minimal power loss and optimal switching efficiency.

This enhancement-mode MOSFET is avalanche-rated for robustness, with its small-signal package approved to the stringent AEC-Q101 automotive qualification standard, making it suitable for demanding environments. It features logic-level compatibility and is dV/dt rated, enhancing its stability and reliability in fast-switching circuits. The device is also constructed as a halogen-free, green product, aligning with modern environmental standards.

Key Features

• Channel Type: P-Channel, ideal for high-side switching and load control applications.
• Voltage and Current Rating: Rated for a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 330mA.
• Low On-State Resistance: Offers a low drain-source on-state resistance (Rds(on)) of just 2 ohms (tested at 10V), which helps to reduce conduction losses and improve overall system efficiency.
• Compact Package: Housed in a space-saving SOT-23 surface-mount package, perfect for densely populated PCBs.
• Wide Temperature Range: Capable of operating at temperatures up to 150°C.
• Gate Drive: Features a low maximum gate-source threshold voltage of 1.5V, facilitating easy drive from logic-level signals.

With a power dissipation rating of 360mW, this MOSFET is a reliable and efficient choice for a wide array of power management tasks, combining Infineon's advanced OptiMOS™ technology in a compact, automotive-grade package.