Infineon CoolMOS C7 Power MOSFET, N-Channel, 600V, 109A, 0.017Ω, TO-247

The Infineon CoolMOS C7 Power MOSFET represents a significant advancement in high-voltage power transistor technology, designed for demanding industrial applications. Built on the innovative superjunction (SJ) principle, it delivers exceptional efficiency and ruggedness, making it an ideal choice for high-power switch-mode power supplies (SMPS) and other critical power conversion tasks. Its revolutionary design enables significant performance improvements over conventional MOSFETs, directly impacting system reliability and energy consumption.

This N-channel MOSFET is specifically engineered for use in both Power Factor Correction (PFC) stages and PWM stages, including popular topologies like TTF and LLC. This versatility allows for its deployment in a wide range of high-performance applications such as computing servers, telecommunications infrastructure, uninterruptible power supplies (UPS), and solar inverters. A key benefit is its capability for both hard-switching and soft-switching operations, providing designers with greater flexibility in optimising their circuits for maximum efficiency.

Key Performance Advantages

• Enhanced Ruggedness: Features increased MOSFET dv/dt ruggedness up to 120V/ns, providing superior resilience against voltage spikes and ensuring reliable operation in harsh electrical environments.
• Best-in-Class Efficiency: Achieves increased efficiency thanks to an optimised figure of merit (FOM) for RDS(on)*Eoss and RDS(on)*Qg, minimising both conduction and switching losses.
• Superior Package Performance: Offers the best-in-class RDS(on) per package size, enabling higher power density solutions by allowing for more compact designs without sacrificing performance.
• High-Frequency Operation: Low Eoss and Qg values permit higher switching frequencies without a corresponding loss in efficiency, enabling smaller magnetic components and further reducing system size.<b