Infineon IR2101STRPBF High & Low Side IGBT MOSFET Driver IC, SOIC-8, 20V

The Infineon IR2101STRPBF is a high-performance, high-voltage driver integrated circuit designed to control both high-side and low-side power switches such as IGBTs and MOSFETs. It utilises proprietary HVIC and latch-immune CMOS technology, resulting in a rugged, monolithic construction that offers exceptional reliability and durability in demanding electronic circuits.

This driver IC features two independent, channel-referenced output channels. The floating high-side channel is capable of operating at voltages up to 600V, making it perfectly suited for driving N-channel power MOSFETs or IGBTs in bridge configurations. Its logic input is compatible with standard CMOS, LSTTL, and low-voltage logic down to 3.3V, ensuring easy integration with modern microcontrollers and digital logic circuits.

Key performance characteristics include a high pulse current output buffer stage, engineered to minimise driver cross-conduction for efficient and safe switching. The device boasts matched propagation delays for both channels, with an output delay of 150ns, ensuring precise timing in critical applications. It is also equipped with protective features such as under-voltage lockout (UVLO) and high noise immunity, being tolerant to negative transient voltages and immune to high dv/dt conditions.

Typical Applications

• Industrial motor drives and control systems.
• Switch-mode power supplies (SMPS) and power management units.
• Consumer electronics requiring robust power switching.
• Alternative energy systems, including solar inverters and wind turbine converters.
• Any application requiring reliable high-side switching in half-bridge or full-bridge topologies.

Packaged in a compact SOIC-8 surface-mount housing, the IR2101STRPBF is designed for automated assembly and offers a moisture sensitivity level (MSL) of 2. Its robust design and wide operating supply (