
High-side MOSFET/IGBT driver, 3.3A sink, 0-18V supply, DIP-8. Ideal for industrial & consumer electronics.
The INFINEON IR2125PBF is a high voltage, high speed power MOSFET and IGBT driver designed for rugged and reliable performance in demanding applications. Featuring proprietary HVIC and latch immune CMOS technology, this monolithic driver offers robust construction and stable operation. Logic inputs are compatible with standard CMOS or LSTTL outputs and can operate with logic levels down to 2.5V, ensuring easy integration with a wide range of control circuits.
The output driver incorporates a high pulse current buffer stage specifically engineered to minimise driver cross-conduction, promoting efficient switching. Protection circuitry detects over-current conditions in the driven power transistor and limits the gate drive voltage to safeguard the system. Cycle-by-cycle shutdown can be programmed using an external capacitor, which directly controls the time interval between detection of over-current limiting conditions and latched shutdown, providing flexible and precise protection.
This driver supports a floating channel for driving an N-channel power MOSFET or IGBT in high-side or low-side configurations, operating at voltages up to 500V. It is tolerant to negative transient voltage and is DV/DT immune, ensuring stable performance in noisy environments. The under-voltage lockout feature prevents malfunction during low supply conditions, and the error lead indicates fault conditions while programming shutdown time. The output is in phase with the input, simplifying control design.
Applications
This driver is ideal for use in industrial and consumer electronics, where reliable switching and protection are essential. Its compact DIP-8 package and through-hole mounting make it suitable for a variety of circuit board designs.
Specifications
_ Channel Configuration: High Side _ Power Switch Type: IGBT, MOSFET _ No. of Channels: 1 _ No. of Pins: 8 _ IC Case / Package: DIP
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