Infineon IRF4905STRLPBF P-Channel Power MOSFET, 55V, 74A, TO-263

The Infineon IRF4905STRLPBF is a high-performance P-channel HEXFET® Power MOSFET, engineered for demanding power management applications. It utilises advanced planar technology to deliver extremely low on-state resistance (Rds(on)) per silicon area, ensuring high efficiency and minimal power loss during operation. This combination of low resistance and fast switching capability makes it an exceptionally reliable and efficient choice for a wide range of electronic designs.

Fully avalanche rated and capable of operating at temperatures up to 175°C, this MOSFET is built for robustness and durability in challenging environments. Its advanced process technology ensures consistent performance and reliability, making it a cornerstone component for power supply designers and engineers.

Key Features & Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 74 A
• Drain-Source On-State Resistance (Rds(on)): 0.02 Ω (tested at 20V)
• Power Dissipation: 200 W
• Gate-Source Threshold Voltage (Max): 4 V
• Transistor Package: TO-263 (D2PAK), Surface Mount
• Number of Pins: 3
• Maximum Operating Temperature: 175°C
• Advanced Technology: Fully avalanche rated for enhanced durability

Housed in a compact TO-263 (D2PAK) surface-mount package, it is designed for efficient PCB layout and effective thermal management, which is critical for handling its 200W power dissipation capability. This MOSFET is an ideal solution for designers seeking to maximise efficiency and reliability in their power electronics systems.