Infineon IRF520NPBF N-Channel Power MOSFET, 100V, 9.7A, TO-220AB

The Infineon IRF520NPBF is a high-performance N-channel HEXFET® Power MOSFET, engineered to deliver maximum efficiency and reliability. It boasts an exceptionally low on-state resistance per silicon area, significantly reducing power losses and heat generation during operation. This benefit is coupled with the fast switching speeds and ruggedised design that HEXFET technology is renowned for, making this device an optimal choice for demanding power management applications.

Constructed with advanced process technology, this MOSFET is both fully avalanche rated and features a high dynamic dv/dt rating, ensuring robust performance under stressful electrical conditions and enhancing its long-term durability. Its efficient design is encapsulated in a standard TO-220AB through-hole package, facilitating easy mounting and excellent thermal performance for heat dissipation.

Key Features & Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 9.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.2 Ω (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 4 V
• Power Dissipation: 47 W
• Maximum Operating Temperature: 175°C
• Package / Mounting: TO-220AB, Through-Hole
• Dimensions (Approx.): 33 mm (W) x 43 mm (H) x 15 mm (D)

This component is designed for designers and engineers seeking a proven, reliable power switching solution that combines efficiency with robust construction for a wide array of electronic projects and commercial products.