Infineon IRF9310 P-Channel Power MOSFET 30V 2A SOIC

The Infineon IRF9310TRPBF is a HEXFET® single P-channel Power MOSFET engineered for high-efficiency power management applications. Its standout feature is an exceptionally low drain-source on-state resistance (RDS(ON) ≤ 4.6mΩ), which minimises conduction losses and improves overall system efficiency. This makes it an excellent choice for designs where thermal management and power conservation are critical.

Housed in an industry-standard SOIC package, this MOSFET offers excellent multi-vendor compatibility, providing design flexibility and simplifying the sourcing process for production. The device is also halogen-free, aligning with modern environmental and safety standards for electronic components.

Primary Applications

This MOSFET is ideally suited for a range of precise power switching roles. Its key applications include serving as a battery protection switch, a high-side or low-side load switch, and a charge/discharge switch in Notebook PC battery packs. It is also well-suited for general power management tasks within computers and computer peripherals.

Key Specifications & Features

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 2A
• Drain-Source On-State Resistance (RDS(ON)): 4600µohm (4.6mΩ)
• Package / Case Style: SOIC, 8-pin
• Mounting Type: Surface Mount (SMD)
• Gate-Source Threshold Voltage (Max): 1.8V
• Power Dissipation: 2.5W
• Maximum Operating Temperature: 150°C
• Technology: HEXFET® Power MOSFET

With its robust electrical characteristics and reliable performance, the Infineon IRF9310 provides a dependable solution for designers seeking to optimise power efficiency and reliability in compact, modern electronic devices.