INFINEON IRF9530NPBF P Channel MOSFET 100V 13A TO-220AB

The INFINEON IRF9530NPBF is a high-performance P Channel HEXFET power MOSFET housed in a robust TO-220AB package. Designed for demanding applications, this MOSFET delivers extremely low on-resistance per silicon area, ensuring high efficiency and reduced power losses in your circuits.

Featuring a drain-to-source voltage (Vds) of -100V, a continuous drain current (Id) of -13A, and an on-resistance (Rds(on)) of just 0.2ohm, it offers excellent switching performance and reliability. The device supports a gate-to-source voltage of ±20V and includes dynamic dv/dt rating, making it rugged and fully avalanche rated for operation in harsh conditions.

With a maximum power dissipation of 79W at 25°C and an operating junction temperature range from -55°C to 175°C, this MOSFET is built to handle high thermal stress. Its fast switching capability and rugged construction make it an ideal choice for a wide variety of power electronics applications, including power supplies, motor controls, and inverters.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): -100V
• Continuous Drain Current (Id): -13A at Vgs -10V, 25°C
• On Resistance (Rds(on)): 200mohm
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 79W at 25°C
• No. of Pins: 3
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Through Hole
• Package: TO-220AB

This MOSFET is a reliable and efficient solution for engineers and hobbyists seeking high-performance switching in their designs.