Infineon IRFP140NPBF N-Channel Power MOSFET, 100V, 33A, TO-247AC

The Infineon IRFP140NPBF is a robust and high-performance N-channel HEXFET® Power MOSFET, engineered to deliver efficient power management in demanding electronic circuits. This advanced component utilises planar technology to achieve an extremely low on-resistance per silicon area, which minimises conduction losses and enhances overall system efficiency. Its fast switching performance makes it an ideal choice for applications requiring rapid power control and high-frequency operation.

Designed for reliability, this MOSFET features a high maximum operating temperature of 175°C and is fully avalanche rated, ensuring it can handle transient voltage spikes without failure. The dynamic dV/dt rating further contributes to its ruggedness in switching environments. Housed in a industry-standard TO-247AC package, it is suitable for through-hole mounting, providing a secure and thermally efficient connection to printed circuit boards.

Key Specifications & Features

• Advanced Technology: Built using Infineon's HEXFET planar technology for low Rds(on) and fast switching.
• High Power Handling: Capable of a continuous drain current of 33A and a power dissipation of 94W.
• Low On-Resistance: A drain-source on-state resistance of just 0.052 ohms at 10V gate drive reduces power loss.
• Robust Construction: Fully avalanche and dV/dt rated for enhanced durability in challenging electrical conditions.
• Wide Temperature Range: Operates reliably at temperatures up to 175°C.

This component is a fundamental building block for designers seeking a dependable, high-efficiency switching solution for a variety of power electronics projects.