Infineon IRFP4468PBF Power MOSFET, N-Channel, 100V, 290A, TO-247AC

The Infineon IRFP4468PBF is a high-performance 100V single N-channel HEXFET® Power MOSFET. Designed using advanced Trench MOSFET technology, it delivers extremely low on-resistance per silicon area alongside rapid switching capabilities, making it a cornerstone component for modern, high-efficiency power systems.

This MOSFET is engineered for robustness, featuring improved gate, avalanche, and dynamic dv/dt ruggedness. It is fully characterised for capacitance and avalanche Safe Operating Area (SOA), and boasts an enhanced body diode with superior dV/dt and dI/dt capability. These characteristics ensure reliable operation in demanding switching environments and provide a significant safety margin in circuit design.

Key Applications

Its primary application is in high-efficiency synchronous rectification within Switch-Mode Power Supplies (SMPS), where its low Rds(on) minimises conduction losses. It is also ideally suited for uninterruptible power supplies (UPS), high-speed power switching, and various hard-switched and high-frequency circuits. This makes it an excellent choice for advanced power management solutions across industrial, computing, and telecommunications infrastructure.

Housed in a robust TO-247AC through-hole package, the device offers a continuous drain current rating of 290A and a very low drain-source on-state resistance of just 2.6mΩ (tested at 20V). With a maximum power dissipation of 520W and an operating temperature ceiling of 175°C, it is built to handle substantial thermal loads in properly designed heatsink assemblies.