Infineon IRFU9024NPBF P-Channel Power MOSFET, 55V, 11A, 0.175 Ohm, TO-251AA

The Infineon IRFU9024NPBF is a single P-channel HEXFET® Power MOSFET, designed with fifth-generation technology for exceptional efficiency and reliability. This advanced component utilises sophisticated processing techniques to achieve an ultra-low on-resistance per unit area, minimising power loss and heat generation during operation. Its key strengths include fast switching speeds and a ruggedised design, hallmarks of the HEXFET family, making it a superior choice for demanding power management applications.

Featuring a fully avalanche-rated construction, this MOSFET can withstand high-energy transients, enhancing system robustness and longevity. The device is supplied in a TO-251AA (D-Pak) package, optimised for through-hole mounting to provide a secure mechanical connection and excellent thermal performance on printed circuit boards (PCBs).

Key Features & Benefits

• Ultra-Low On-Resistance: At just 0.175 Ohm (tested at 10V), it ensures minimal conduction losses, improving overall system efficiency.
• Advanced Process Technology: Fifth-generation HEXFET design delivers high performance and reliability in a compact silicon area.
• Rugged & Reliable: Fully avalanche-rated for superior durability against voltage spikes and harsh operating conditions.
• High Current Handling: Capable of a continuous drain current (Id) of 11 Amps, suitable for power-dense applications.
• Wide Temperature Range: Operates effectively up to a maximum junction temperature of 150°C.

With its combination of low resistance, fast switching, and robust design, the IRFU9024NPBF is an extremely efficient and reliable device for designers working on switch-mode power supplies, motor control, DC-DC converters, and other high-performance power electronics systems.