Infineon IRLB4030PBF Power MOSFET, N-Channel, 100V, 110A, TO-220AB

The Infineon IRLB4030PBF is a high-performance, 100V single N-channel HEXFET® power MOSFET. Engineered using advanced Trench MOSFET technology, it delivers an exceptionally low on-resistance per silicon area coupled with fast switching characteristics, making it ideal for demanding power applications. Optimised for logic level drive, it operates efficiently with a gate-source voltage (VGS) as low as 4.5V, simplifying drive circuitry design.

This component is designed for ruggedness and reliability, featuring improved gate, avalanche, and dynamic dv/dt capability. It also boasts an enhanced body diode with superior dV/dt and dI/dt performance, ensuring robust operation in challenging circuit conditions. The device is fully characterised for capacitance and avalanche safe operating area (SOA), providing designers with the critical data needed for safe and efficient system implementation.

Key Features & Benefits

• Optimised Logic Level Drive: Ensures easy interfacing with microcontrollers and logic circuits.
• Very Low RDS(ON): Minimises conduction losses at 4.5V VGS, leading to higher system efficiency.
• Superior R*Q Figure of Merit: Delivers an excellent balance of low on-resistance and gate charge for fast switching.
• Enhanced Ruggedness: Improved tolerance to gate stress, avalanche events, and high voltage transients (dv/dt).
• Robust Body Diode: The integrated diode offers enhanced capability for handling high rates of change in voltage and current.

Housed in the industry-standard TO-220AB through-hole package, it facilitates easy mounting and provides excellent thermal performance for heat dissipation, supporting a maximum power dissipation of 370W.