Infineon IRLR024N N-Channel Power MOSFET, 55V 17A, TO-252AA

The Infineon IRLR024N Power MOSFET is a high-performance, fifth-generation HEXFET® device designed for maximum efficiency and reliability. It utilises advanced process technology to deliver an exceptionally low ON-resistance of just 0.065 ohm, minimising power loss and heat generation in demanding applications. This, combined with its fast switching speed and rugged design, makes it an ideal solution for modern, compact power management systems.

As a logic-level device, it can be driven directly from 5V microcontroller outputs, simplifying circuit design. It features a fully rated avalanche capability and a dynamic dV/dt rating, ensuring robust performance in harsh electrical environments and under inductive load conditions. The TO-252AA (DPAK) surface-mount package is designed for efficient power dissipation, capable of handling up to 45W, with 1.5W typical in standard SMT applications.

This MOSFET is intended for surface-mount assembly using vapour phase, infrared, or wave soldering techniques, making it suitable for high-volume automated production. Its combination of low Rds(on), high current capability, and a compact footprint provides designers with a highly efficient switching component for a wide range of power electronics.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 17 A
• Drain-Source ON-Resistance (Rds(on)): 0.065 ohm (tested at 10V)
• Gate-Source Threshold Voltage: 2V max
• Maximum Power Dissipation: 45 W
• Package: TO-252AA (DPAK), Surface Mount
• Pin Count: 3
• Maximum Operating Temperature: 175°C

With its advanced HEXFET technology, the IRLR024N delivers superior performance for switching and power conversion tasks, offering an optimal balance of efficiency, size, and cost.