Infineon N Channel Power MOSFET, 200V, 30A, TO-247AC

The Infineon N Channel Power MOSFET is a high-performance HEXFET device housed in a robust TO-247AC through-hole package. Engineered for exceptional efficiency and reliability, this transistor features extremely low on-resistance per silicon area, making it an ideal choice for circuit designs requiring high power density and minimal conduction losses.

Key attributes of this component include a dynamic dv/dt rating, ease of paralleling, and a fully avalanche-rated rugged construction. With fast switching speeds and simple drive requirements, this MOSFET is perfectly suited for a wide variety of demanding power management and conversion applications.

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 30A
• On Resistance (Rds(on)): 0.075 ohm (75mohm at Vgs 10V)
• Gate to Source Voltage: ±20V
• Power Dissipation (Pd): 214W at 25°C
• Gate Source Threshold Voltage Max: 4V
• Operating Junction Temperature Range: -55°C to 175°C
• Number of Pins: 3
• Mounting Style: Through Hole

This advanced power MOSFET provides robust and dependable performance for your most demanding electronic projects and industrial applications.