Infineon N-Channel Power MOSFET 20V 2.3A 0.057 Ohm SOT-23

The Infineon N-Channel Power MOSFET is an OptiMOS™2 enhancement-mode small signal transistor designed for high-efficiency power management and industrial applications. Offering a 1.8V rated ultra logic level, this transistor ensures reliable switching performance at low voltage levels, making it highly suitable for sensitive electronic circuits.

This device features a low drain-source on-state resistance of 0.057 ohm, which minimises conduction losses and improves overall energy efficiency. With a continuous drain current of 2.3A and a drain-source voltage of 20V, it provides robust performance in compact designs. The SOT-23 surface-mount package allows for efficient use of PCB space, making it ideal for densely populated circuit boards.

Furthermore, this Power MOSFET is halogen-free, aligning with modern environmental standards. It is qualified to AEC-Q101 standards, ensuring reliability in demanding conditions with an operating temperature range up to 150°C. Key specifications include a maximum gate-source threshold voltage of 550mV and a power dissipation of 500mW.

Whether you are designing power management systems or industrial electronics, this N-channel MOSFET delivers dependable performance in a compact footprint.