Infineon N-Channel Power MOSFET 30V 2.7A SOT-23

The Infineon N-Channel Power MOSFET is a high-performance HEXFET® device designed for reliable power management applications. Featuring an industry-standard pin-out, this MOSFET ensures multi-vendor compatibility, making it an excellent choice for flexible circuit design and seamless integration into existing projects.

This surface-mount transistor is specifically engineered for use as a load or system switch, DC switch, and for battery protection circuits. Its halogen-free construction and MSL1 rating provide increased reliability, ensuring stable performance in demanding environments where consistent power handling is crucial.

With a drain-source voltage of 30V and a continuous drain current of 2.7A, this MOSFET delivers efficient switching performance. The low drain-source on-state resistance of 0.1 ohm minimises power loss and heat generation, enhancing the overall efficiency of your system. Enclosed in a compact SOT-23 case style, it is fully compatible with standard surface-mount manufacturing techniques, allowing for automated and efficient PCB assembly.

Key Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 2.7A
• Drain Source On State Resistance: 0.1 ohm
• Gate Source Threshold Voltage Max: 1.7V
• Power Dissipation: 1.3W
• Operating Temperature Max: 150°C
• No. of Pins: 3
• Case Style: SOT-23
• Mounting: Surface Mount
• Weight: 0.052 grams
• Dimensions: 43 mm x 33 mm x 15 mm