Infineon StrongIRFET N Channel Power MOSFET, 40V 195A TO-220AB

The Infineon StrongIRFET™ Power MOSFET is a single N-channel device engineered for low-frequency applications that demand both performance and ruggedness. With a high continuous drain current of 195 A and a drain-source voltage of 40 V, this MOSFET delivers reliable power handling for demanding circuit designs. Its through-hole mounting and industry-standard TO-220AB package with standard pinout allow for straightforward drop-in replacement, simplifying your PCB layout and assembly process.

This power MOSFET features improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring robust performance under stressful conditions. It also boasts fully characterised capacitance and avalanche Safe Operating Area (SOA), alongside an enhanced body diode dV/dt and dI/dt capability. Compared to previous silicon generations, it offers a softer body diode, which helps to reduce electrical stress and improve overall efficiency.

Key Features

• High-current rating and high-current carrying capability package
• Product qualification according to JEDEC standards
• Industry standard qualification level
• High performance in low frequency applications
• Increased power density
• Standard pinout allows for drop in replacement

Whether you are designing motor drives or power converters, this Infineon MOSFET provides the durability and electrical characteristics required for robust and efficient operation.