Infineon N-Channel Power MOSFET, 60V 230mA, SOT-23 SMD

The Infineon N-Channel Power MOSFET is a high-performance small-signal transistor, engineered for efficient switching and amplification in compact electronic circuits. Presented in a standard SOT-23 surface-mount package, this enhancement-mode device is designed for logic-level control, making it directly compatible with microcontrollers and low-voltage digital outputs without the need for additional driver circuitry.

With a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) of 230mA, it offers robust performance for a wide array of low-power applications. A key feature is its dv/dt rating, which enhances reliability in environments with rapidly changing voltages, providing increased protection against unwanted switching events.

Key Specifications & Features

• Channel Type: N-Channel enhancement mode
• Package: 3-pin SOT-23 (Surface-Mount Device)
• Logic Level: Suitable for direct drive from 5V or 3.3V logic
• On-State Resistance (Rds(on)): Low resistance for minimal power loss during conduction
• Qualification: Manufactured and qualified in accordance with the stringent AEC-Q101 standard for automotive-grade components, ensuring high reliability and performance under demanding conditions.

This MOSFET is an ideal choice for designers requiring a reliable, space-saving switching solution. Its combination of logic-level compatibility, robust voltage rating, and automotive qualification makes it a versatile component for prototyping, consumer electronics, and automotive auxiliary systems where consistent performance is critical.