INFINEON P Channel Power MOSFET, 100V, 23A, 0.117 ohm, TO-220AB

The INFINEON P Channel Power MOSFET is a high-performance HEXFET device housed in a robust TO-220AB package. Engineered for exceptional efficiency and reliability, this MOSFET features extremely low on-resistance per silicon area, ensuring minimal power loss and optimal performance in demanding environments.

Designed with a dynamic dv/dt rating, this component is both rugged and fast-switching, making it fully avalanche rated for superior durability. These advanced characteristics make it an ideal choice for a wide variety of applications requiring precise power management and robust switching capabilities.

Key Specifications

• Channel Type: P Channel
• Drain to Source Voltage (Vds): -100V
• Gate to Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -23A (at Vgs -10V, 25°C)
• On Resistance (Rds(on)): 117mΩ (at Vgs -10V)
• Power Dissipation (Pd): 140W (at 25°C)
• Operating Junction Temperature Range: -55°C to 175°C

Whether you are designing industrial systems or consumer electronics, this through-hole MOSFET delivers the fast switching and rugged performance required for modern power applications.