Infineon P-Channel Power MOSFET, 100V 6.6A, TO-252

The Infineon IRFR9120NTRPBF is a fifth-generation HEXFET® P-Channel Power MOSFET, engineered using advanced processing techniques to deliver extremely low ON-resistance per silicon area. This core benefit, combined with fast switching speed and a ruggedised device design, results in a highly efficient and reliable component for demanding electronic applications. It is ideally suited for surface-mount assembly using vapour phase, infrared, or wave soldering techniques, and can handle power dissipation levels up to 1.5W in typical surface-mount configurations.

A key strength of this MOSFET is its advanced process technology, which ensures consistent performance and durability. The device boasts a fully avalanche-rated specification, providing enhanced robustness against voltage spikes. Its low static drain-to-source ON-resistance maximises efficiency by minimising power loss, while the dynamic dV/dt rating guarantees stability during fast switching events.

Technical Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 6.6 A
• Drain-Source On-State Resistance (Rds(on)): 0.48 Ω (tested at 10V)
• Gate-Source Threshold Voltage (Max): 4 V
• Maximum Power Dissipation: 40 W
• Package / Case Style: TO-252 (DPAK)
• Mounting Type: Surface Mount
• Number of Pins: 3
• Maximum Operating Temperature: 150 °C
• Dimensions: 43 mm (Height) x 33 mm (Width) x 15 mm (Depth)
• Weight: 0.585 grams

Designed for reliability and efficiency, this Infineon MOSFET is a trusted choice for engineers seeking a high-performance switching solution in compact, surface-mount packages.