Infineon P Channel Power MOSFET 20V 4.3A SOT-23

The Infineon P-Channel HEXFET® Power MOSFET is engineered for seamless compatibility with existing surface mount techniques, delivering a highly efficient and reliable solution for modern electronic circuits. This advanced transistor features lower switching losses and increased reliability, alongside an environmentally friendly design that meets contemporary industry standards.

A standout benefit of this component is its multi-vendor compatibility and industry-standard pinout. These attributes ensure straightforward integration into your designs, minimising development time and simplifying the procurement process by allowing alternative sourcing without layout changes.

Applications

This power MOSFET is ideally suited for demanding environments and critical power systems. It is frequently utilised in:

• Industrial applications
• Power management systems

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 4.3A
• Drain Source On State Resistance: 0.054 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 4.5V
• Gate Source Threshold Voltage Max: 1.1V
• Power Dissipation: 1.3W
• No. of Pins: 3
• Operating Temperature Max: 150°C

Enclosed in a compact SOT-23 package, this surface mount device provides excellent power density and is perfectly suited for high-volume automated assembly processes.