Infineon P-Channel Power MOSFET, 30V 15A, SOIC-8 SMD

This Infineon P-Channel Power MOSFET is a high-performance surface-mount component designed for efficient power management in modern electronic circuits. Part of the renowned HEXFET series, it offers a robust combination of high current handling and low on-state resistance, making it an ideal choice for switching and amplification applications where space and efficiency are critical.

The device features a Drain-Source Voltage (Vds) rating of 30V and can handle a continuous drain current (Id) of 15A. A key specification is its exceptionally low Drain-Source On-State Resistance (Rds(on)) of just 7.2 mΩ (measured at 10V), which minimises power loss and heat generation during operation, thereby improving overall system efficiency and reliability.

Housed in a compact SOIC-8 surface-mount package, it is perfectly suited for automated assembly processes on printed circuit boards (PCBs). The component has a maximum power dissipation of 2.5W and can operate in temperatures up to 150°C, ensuring stable performance in demanding environments. Its P-channel configuration provides design flexibility, often simplifying circuit design for high-side switching applications.

Key Specifications:

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 15A
• Drain-Source On-State Resistance (Rds(on)): 7.2 mΩ @ 10V
• Gate-Source Threshold Voltage (Vgs(th) max): 1.8V
• Package / Case: SOIC-8 (Surface Mount)
• Power Dissipation: 2.5W
• Maximum Operating Temperature: 150°C
• Number of Pins: 8

This reliable Infineon MOSFET is a fundamental building block for power electronics, offering designers a proven solution for efficient current control.