Infineon P-Channel Power MOSFET 40V 10.5A 0.015 Ohm SOIC

The Infineon P-Channel Power MOSFET utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This feature provides designers with a highly efficient device, specifically tailored for use in battery and load management applications.

Engineered with a customised lead-frame, this component offers enhanced thermal characteristics and multiple-die capability, making it an ideal choice for a variety of power applications. These improvements allow multiple devices to be integrated into a circuit with dramatically reduced board space requirements.

The SOIC package is designed to accommodate vapour phase, infrared, or wave soldering techniques, ensuring versatile and reliable assembly options. It features an industry standard pin-out for straightforward implementation into existing circuit designs.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 10.5A
• Drain Source On State Resistance: 0.015 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 2.5W
• Number of Pins: 8
• Operating Temperature Max: 150°C
• Transistor Case Style: SOIC
• Transistor Mounting: Surface Mount
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.128 g