Infineon P-Channel Power MOSFET, 40V 85A, TO-252

The Infineon P-Channel Power MOSFET (OptiMOS P2 series) is a high-performance surface-mount power transistor designed for demanding switching applications. Engineered with Infineon's advanced OptiMOS technology, it delivers an exceptionally low on-state resistance (Rds(on)) of just 0.0053 Ohms (6400µohm), which minimises power loss and heat generation for improved system efficiency.

This component is rated for a continuous drain current (Id) of 85A and a drain-source voltage (Vds) of 40V, making it suitable for controlling substantial loads. With a high maximum power dissipation of 88W and an operating temperature range extending up to 175°C, it is built for robust and reliable performance in challenging environments.

Housed in a compact and industry-standard TO-252 (DPAK) surface-mount package, it facilitates efficient PCB design and automated assembly processes. The device is qualified to the stringent AEC-Q101 standard, ensuring it meets the high-reliability requirements for automotive and other critical applications.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 85A
• Drain-Source On-State Resistance (Rds(on)): 0.0053 Ohm (6400µohm) @ 10V
• Gate-Source Threshold Voltage (Max): 1.7V
• Maximum Power Dissipation: 88W
• Package Type: TO-252 (DPAK), Surface Mount
• Pin Count: 3 Pins
• Maximum Operating Temperature: 175°C
• Product Range: OptiMOS P2
• Qualification: AEC-Q101

This MOSFET is an ideal solution for designers seeking efficient power management in a compact, reliable package.