Infineon P-Channel Power MOSFET, 55V 11A, TO-252AA

This Infineon P-Channel Power MOSFET utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with fast switching speed and a ruggedised device design, provides an extremely efficient and reliable operation for your electronic circuits.

Designed specifically for surface-mounting, this component is compatible with vapour phase, infrared, or wave soldering techniques. It boasts a power dissipation level of up to 1.5W in typical surface-mount applications, making it highly versatile for densely populated circuit boards.

Key Features

• Advanced process technology
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating

Featuring a TO-252AA case style, this MOSFET operates with a continuous drain current of 11A and a drain source voltage of 55V. It ensures stable performance with a maximum operating temperature of 150°C and a gate source threshold voltage of 4V. The low ON-resistance of 0.175 ohm guarantees efficient power management and minimal energy loss, making it an excellent choice for demanding applications. Engineered for robust performance, this P-channel MOSFET delivers reliable switching capabilities.