INFINEON P Channel Power MOSFET 55V 31A 0.065 Ohm TO-252

The INFINEON P Channel Power MOSFET is a fifth-generation HEXFET device that utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with fast switching speed and a ruggedised device design, provides highly efficient and reliable operation for your electronic circuits.

Designed specifically for surface mounting, this component is compatible with vapour phase, infrared, or wave soldering techniques. It offers a maximum power dissipation of 110W, with up to 1.5W possible in typical surface-mount applications, making it versatile for various design requirements.

Key Features

• Advanced process technology
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating

Featuring a robust TO-252 (DPAK) case style, this surface-mount MOSFET operates with a continuous drain current of 31A and a drain-source voltage of 55V. Its gate-source threshold voltage reaches a maximum of 4V, and it can withstand operating temperatures up to 175°C. With its 3-pin configuration and compact dimensions, it is an excellent choice for space-constrained applications requiring dependable power management and automotive solutions.