
Infineon P-Channel Power MOSFET, 55V, 31A, 0.065 ohm, TO-252AA surface mount. Ultra low on-resistance for power management.
This single P-channel HEXFET® Power MOSFET from Infineon utilises advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedised device design that HEXFET® power MOSFETs are renowned for, provides an extremely efficient and reliable device for use in a wide variety of applications.
The TO-252AA (D-Pak) case style is designed specifically for surface mounting, accommodating vapour phase, infrared, or wave soldering techniques. This ensures versatile integration into various circuit board designs and manufacturing processes.
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