Infineon SPP80P06P P-Channel Power MOSFET 60V 80A TO-220
Buy Infineon P-Channel Power MOSFET 60V 80A, TO-220 package. Low Rds(on) 0.021ohm. Ideal for power management, automotive, and consumer electronics.
The **Infineon SPP80P06P** is a SIPMOS® P-channel enhancement mode Power Transistor, engineered for demanding power system designs. This component consistently meets high quality and performance standards, focusing on critical specifications such as on-state resistance and figure of merit.
This MOSFET offers a drain-source voltage of 60V and a continuous drain current of 80A, making it suitable for a wide range of power applications. Its low on-state resistance (0.021ohm typical) ensures efficient power handling. The device features a maximum gate-source voltage of ±20V and is avalanche rated, providing robustness in harsh operating conditions. It is halogen-free, aligning with modern environmental regulations.
Housed in a TO-220 package, this transistor is designed for through-hole mounting, offering ease of integration and reliable thermal performance. With a power dissipation of 340W and an operating temperature range up to 175°C, it handles high-power tasks efficiently. The component is AEC-Q101 qualified, indicating suitability for automotive applications. Its compact dimensions (Height: 43mm, Width: 33mm, Depth: 15mm) and light weight (approximately 0.9 grams) facilitate straightforward PCB assembly.
Key Features: * P-Channel enhancement mode * 60V drain-source voltage * 80A continuous drain current * Low on-state resistance: 0.021ohm * Avalanche rated * Halogen-free * ±20V gate-source voltage rating
Ideal for power management, automotive systems, and consumer electronics, this Infineon MOSFET delivers reliable performance and durability.
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