IXYS Polar HiPerFET N Channel MOSFET, 200 A, 100 V, 0.0075 ohm, 8 g

The IXFN200N10P is an N-channel enhancement mode Power MOSFET from IXYS Semiconductor. It features the miniBLOC package with aluminium nitride isolation, providing excellent thermal performance and electrical isolation. The device utilises the low RDS(on) HDMOS™ process, ensuring high efficiency and reduced conduction losses in demanding power applications.

Engineered for reliability, this MOSFET has a rugged polysilicon gate cell structure and is rated for unclamped inductive switching (UIS), making it suitable for harsh inductive load environments. The fast intrinsic rectifier enhances switching performance, while the encapsulating epoxy meets UL94V-0 flammability classification, ensuring high safety standards.

The component is designed for easy mounting and delivers high power density and space savings, making it an ideal choice for compact, high-performance power systems. With a continuous drain current of 200 A and a drain-source voltage of 100 V, it offers robust performance for power management and lighting applications.

Specifications

• Channel Type: N Channel
• Continuous Drain Current (Id): 200 A
• Drain-Source Voltage (Vds): 100 V
• Drain-Source On-State Resistance: 7.5 mΩ (7500 µΩ)
• Rds(on) Test Voltage: 15 V
• Gate-Source Threshold Voltage (Max): 5 V
• Power Dissipation: 680 W
• Operating Temperature (Max): 175 °C
• Product Range: Polar™ HiPerFET
• Package: miniBLOC with aluminium nitride isolation
• Weight: 8 g
• Dimensions: 43 mm × 33 mm × 15 mm