Microchip N Channel Power MOSFET 20V 530mA TO-92

The Microchip N Channel Power MOSFET is a low threshold, enhancement-mode (normally-off) transistor that utilises a vertical DMOS structure alongside a proven silicon-gate manufacturing process. This combination produces a device offering the power handling capabilities of bipolar transistors, combined with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown, ensuring reliable operation in demanding conditions.

Key Features

• Low threshold: 1.6V max
• High input impedance
• Low input capacitance: 130pF typical
• Fast switching speeds
• Low on-resistance guaranteed at VGS = 2V, 3V, and 5V
• Free from secondary breakdown
• Low input and output leakage

Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, this component is designed for through-hole mounting in a TO-92 case style. With a weight of 17.097 grams, it is highly suitable for space-constrained and lightweight electronic assemblies.

Applications

This versatile MOSFET is ideally suited for logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, photovoltaic drives, and analogue switches.