N Channel Power MOSFET, 60V, 150mA, SOT-23

The ZVN3306F is an N-channel enhancement mode vertical MOSFET, designed for efficient power switching and amplification in a compact SOT-23 package. This device features a drain-source voltage of 60V and a continuous drain current of 150mA, with a pulsed drain current capability of up to 3A, making it suitable for a wide range of low-power switching applications.

With a static drain-source on-state resistance of 5 ohms maximum at a gate-source voltage of 10V and a drain current of 500mA, this MOSFET offers efficient performance with minimal conduction losses. The gate-source threshold voltage is 2.4V maximum, ensuring compatibility with standard logic-level drive circuits. The device supports a gate-source voltage range of ±20V, providing flexibility in control circuitry.

The power dissipation is rated at 330mW at an ambient temperature of 25°C, with an operating and storage temperature range from -55°C to +150°C, ensuring reliability in demanding environments. The SOT-23 package is surface-mount compatible, allowing for compact and automated assembly processes.

This MOSFET is ideal for use in switching circuits, load switching, and signal amplification, where its high-performance characteristics and small footprint provide an optimal solution. Its robust construction and precise electrical specifications make it a dependable choice for your electronic designs.