Nexperia 2N7002P N-Channel MOSFET, 60V, 360mA, SMD

The Nexperia 2N7002P is an N-channel enhancement-mode MOSFET designed in a compact surface-mount plastic package, manufactured using advanced Trench MOSFET technology. This component delivers efficient and reliable switching performance for a wide range of electronic applications.

With a drain-source voltage of 60V and a continuous drain current of 360mA, this MOSFET is well-suited for driving relays, high-speed line drivers, low-side load switches, and general switching circuits. Its logic-level compatibility allows direct interfacing with low-voltage control signals, simplifying circuit design.

Key Features

• Very fast switching for high-frequency operations
• Logic-level compatible for easy integration with microcontrollers and logic ICs
• AEC-Q101 qualified for automotive-grade reliability
• Surface-mount package (TO-236AB) for space-saving PCB designs
• Low on-state resistance (1.6 ohms typical) for reduced power losses

Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 360mA
• On-State Resistance: 1.6 ohms
• Transistor Case Style: TO-236AB
• Mounting Type: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate-Source Threshold Voltage (Max): 1.75V
• Power Dissipation: 420mW
• Number of Pins: 3
• Operating Temperature (Max): 150°C

This MOSFET is an excellent choice for designers seeking a reliable and high-performance switching solution in automotive, power management, and industrial applications.