Nexperia BCP56 NPN Medium Power Transistor, 80V 1A SOT-223

The Nexperia BCP56 is an NPN medium power bipolar junction transistor (BJT) designed for high-performance applications. Housed in a very small leadless surface-mount plastic package, this single transistor offers an excellent combination of power and size, making it ideal for compact circuit designs.

Featuring high current capability and three current gain selections, the BCP56 provides design flexibility for various electronic projects. It boasts a high power dissipation capability of 650mW, ensuring reliable operation under demanding conditions. A key design feature is the exposed heat-sink, which ensures excellent thermal and electrical conductivity, effectively managing heat during sustained use.

With a maximum collector-emitter voltage of 80V and a continuous collector current of 1A, this transistor is well-suited for medium power switching and amplification tasks. It operates efficiently at high frequencies with a transition frequency of 180MHz and offers a DC current gain (hFE) of 100. The SOT-223 casing is designed for surface mount technology, facilitating automated assembly processes. The overall product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight profile of just 0.2 grams.

Key Features

• Transistor Polarity: NPN
• Maximum Collector Emitter Voltage: 80V
• Continuous Collector Current: 1A
• Power Dissipation: 650mW
• Transition Frequency: 180MHz
• DC Current Gain (hFE): 100
• Maximum Operating Temperature: 150°C
• Package Type: SOT-223
• Mounting Style: Surface Mount
• Number of Pins: 4

Whether you are designing power management circuits or general-purpose switching applications, the Nexperia BCP56 NPN transistor delivers robust performance in a compact footprint.