NEXPERIA N-Channel Power MOSFET, 20V, 6.8A, 0.02 ohm, TO-236AB

The NEXPERIA N-Channel Power MOSFET is an enhancement-mode Field Effect Transistor (FET) housed in a compact surface-mount plastic package. Utilising advanced Trench MOSFET technology, this component delivers reliable and efficient performance for a variety of electronic circuits. It weighs just 0.048 grams and measures 43 mm in height, 33 mm in width, and 15 mm in depth, making it suitable for automated assembly and space-constrained designs.

Key features of this power MOSFET include a low threshold voltage and very fast switching speeds, ensuring highly responsive operation in demanding applications. It also boasts an enhanced power dissipation capability of 1200mW and operates within a wide junction temperature range of -55°C to 150°C, guaranteeing stability under varying thermal conditions.

This transistor is specifically designed for use in LED driver, low-side load-switch, and general switching circuit applications. Its surface-mount design (TO-236AB case style) allows for efficient use of PCB space.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 6.8A
• Drain Source On State Resistance (Rds(on)): 0.02 ohm
• Gate Source Threshold Voltage Max: 650mV
• Power Dissipation: 510mW
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Transistor Case Style: TO-236AB
• Mounting Type: Surface Mount