
NEXPERIA N-Channel Trench MOSFET, 55V, 210mA. Features fast switching & ESD protection in a SOT-23 SMD package.
The NEXPERIA N-Channel Trench Power MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a compact SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Utilising advanced Trench MOSFET technology, this transistor delivers efficient and reliable performance for a variety of electronic switching applications.
Designed for versatility, it features a low threshold voltage and very fast switching speeds, making it highly responsive in demanding circuits. Additionally, the device includes robust ElectroStatic Discharge (ESD) protection, rated greater than 3 kV HBM, ensuring excellent resilience in sensitive environments.
Key Specifications
With a high maximum operating temperature and efficient power dissipation, this MOSFET is built to perform consistently. Its surface-mount design allows for streamlined integration into automated assembly processes.
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