NEXPERIA P Channel Power MOSFET 30V 1A SOT-223

The NEXPERIA P Channel Power MOSFET is a high-performance -30V P-channel enhancement mode vertical D-MOS transistor designed for demanding electronic applications. Engineered with high-speed switching capabilities and exceptionally low on-state resistance, this device ensures efficient power management and minimal energy loss during operation. Its robust construction and advanced semiconductor technology make it a reliable choice for engineers and electronics designers seeking optimal performance in compact form factors.

This surface-mount transistor is particularly suitable for use in low-loss motor and actuator drivers, as well as a broad range of power switching applications. It can operate in demanding environments, supporting a maximum junction temperature of 150°C for sustained reliability under thermal stress.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 1A
• Drain Source On State Resistance: 0.25 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 2.8V
• Power Dissipation: 5W
• Number of Pins: 3
• Maximum Operating Temperature: 150°C

Physical Characteristics

• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Weight: 1.588 grams
• Height: 43 mm
• Width: 33 mm
• Depth: 15 mm

With its combination of low resistance, high-speed switching, and durable design, this power MOSFET is an excellent component for industrial and power management circuitry.