Nexperia SMD P-Channel Power MOSFET, 60V 2.2A, SOT-23

The Nexperia PMV100EPAR is a P-Channel enhancement mode field-effect transistor (FET) housed in a compact SOT-23 (TO-236AB) surface-mount plastic package. Engineered with advanced Trench MOSFET technology, this component delivers very fast switching performance, making it an ideal choice for efficient power management and control circuits.

This logic-level compatible MOSFET is AEC-Q101 qualified, ensuring it meets stringent automotive-grade reliability standards for demanding applications. Its robust design supports a continuous drain current of 2.2A and a drain-source voltage of 60V, with a low on-state resistance (Rds(on)) of 0.13 ohm, which helps to minimise power losses and heat generation.

Key Features & Applications

• Versatile Switching: Perfectly suited as a high-side load switch, relay driver, and high-speed line driver in various switching circuits.
• Fast Performance: The Trench MOSFET technology enables very fast switching speeds, critical for modern, high-frequency applications.
• Automotive Grade: Its AEC-Q101 qualification makes it a reliable choice for automotive electronics and other harsh environments.
• Compact Design: The small SOT-23 footprint saves valuable board space in densely packed electronic assemblies.

With a maximum power dissipation of 710mW and an operating temperature range extending up to 175°C, this MOSFET offers both durability and performance. It is supplied in tape and reel packaging compatible with standard automated assembly processes.