NEXPERIA Power MOSFET N Channel 60V 190mA SMD TO-236AB

This NEXPERIA Power MOSFET is a high-performance N Channel trench MOSFET designed for efficient switching and power management in modern electronic circuits. With a drain source voltage rating of 60V and a continuous drain current of 190mA, this component delivers reliable performance for low-power applications.

The MOSFET features a low drain source on state resistance of 4.5 ohms (at a test voltage of 10V), ensuring minimal power loss and improved efficiency during operation. Its surface mount package, TO-236AB, allows for compact and space-saving PCB designs, making it ideal for automated assembly processes.

Key technical specifications include a gate source threshold voltage maximum of 1.6V, a power dissipation of 265mW, and a maximum operating temperature of 150°C, ensuring stable operation across a wide range of conditions. The component is housed in a 3-pin configuration and is compliant with RoHS regulations, containing no SVHC substances as of June 2025.

This transistor is suitable for a variety of low-power switching and amplification tasks, including load switching, signal processing, and voltage regulation circuits. Its compact size and high reliability make it an excellent choice for engineers and hobbyists alike.

Key Features:

• N Channel Trench Technology for enhanced efficiency
• Low On-State Resistance for minimal power loss
• Surface Mount Package for easy integration
• RoHS Compliant and free from SVHC as of 2025