ON Semi NDT2955 P Channel MOSFET 60V 2.5A SOT-223

The ON Semiconductor NDT2955 is a surface mount, P channel enhancement mode field effect transistor supplied in a compact SOT-223 package. It is manufactured using a high voltage trench process, making it well suited for power management applications where efficiency and reliability are essential.

The high density cell design delivers extremely low on state resistance (Rds(ON)) of just 163mohm at Vgs -4.5V, helping to minimise conduction losses and improve overall system performance. The transistor offers a drain to source voltage (Vds) of -60V, a gate to source voltage of ±20V, and a continuous drain current (Id) of -2.5A, with a power dissipation of 3W.

This MOSFET is designed to operate over a wide temperature range from -55°C to 150°C, ensuring dependable operation in demanding environments. With a gate source threshold voltage maximum of 2.6V and an Rds(on) test voltage of 10V, it provides predictable switching behaviour.

The component is supplied in an MSL 1 - Unlimited moisture sensitivity level classification, offering flexibility in handling and storage. Its surface mount SOT-223 package with 4 pins is ideal for automated assembly processes.

Key Specifications

_ Channel Type: P Channel _ Drain Source Voltage Vds: -60V _ Continuous Drain Current Id: -2.5A _ Drain Source On State Resistance: 0.3ohm _ Transistor Mounting: Surface Mount _ Rds(on) Test Voltage: 10V _ Gate Source Threshold Voltage Max: 2.6V _ Power Dissipation: 3W _ No. of Pins: 4Pins _ Operating Temperature Max: 150°C _ MSL: MSL 1 - Unlimited

The NDT2955 from ON Semiconductor is a dependable choice for engineers requiring a high performance P channel MOSFET for power management circuits.