Onsemi BC857CLT1G PNP General Purpose Transistor SOT-23

The Onsemi BC857CLT1G PNP General Purpose Transistor is a bipolar junction transistor (BJT) with a collector-emitter voltage (Vceo) of -45V and a continuous collector current of -100mA, housed in a compact SOT-23 surface-mount package.

Overview

The BC857CLT1G is a PNP general purpose bipolar junction transistor designed for a range of linear and switching applications. Its compact SOT-23 surface-mount package suits lower power, space-constrained circuits and miniaturised electronic designs. It has a power dissipation rating of 225mW, a DC current gain (hFE) of 420, and a transition frequency of 100MHz, making it suitable for moderate-speed switching and amplification tasks.

Key Features

• PNP polarity with a collector-emitter voltage (Vceo) of -45V
• Continuous collector current of -100mA
• Power dissipation of 225mW
• DC current gain (hFE) of 420
• Transition frequency of 100MHz
• Maximum operating temperature of 150°C
• Surface-mount SOT-23 (3-pin) package
• Dimensions (width x depth x height): 3.3 x 1.5 x 4.3
• Weight: 0.033 g

Qualification

The transistor is AEC-Q101 qualified and PPAP capable, which is relevant to demanding environments, including automotive and industrial applications where consistent performance under varying temperatures and stresses is required.

Applications

The BC857CLT1G can be deployed in signal amplification, oscillation, load switching and interface logic circuits. It is also suited to power management systems, control modules and general-purpose electronic circuitry.

Choose the Onsemi BC857CLT1G PNP General Purpose Transistor for compact, surface-mount designs that require a PNP transistor with the specifications listed above.