ON Semiconductor BS170 N-Channel MOSFET 60V 0.5A TO-226AA

This ON Semiconductor BS170_D75Z is a robust N-channel enhancement-mode MOSFET, crafted with high cell density DMOS technology to deliver optimal performance in a wide array of applications. The advanced design significantly minimizes ON-state resistance, ensuring efficient operation while providing rugged, reliable, and fast switching capabilities. This component is engineered to handle most applications requiring a continuous drain current of up to 500mA, making it a versatile choice for various electronic circuits. It is especially suited for low voltage, low current scenarios, such as power MOSFET gate drivers and other switching applications where precision and efficiency are paramount.

The BS170_D75Z features a high-density cell design that provides a low RDS(on), which enhances overall efficiency by reducing power loss. As a voltage-controlled small signal switch, it offers excellent performance and reliability. Additionally, its high saturation current capability makes it suitable for demanding operational conditions. With a drain-source voltage of 60V and a maximum power dissipation of 830mW, this MOSFET delivers consistent performance. Housed in a compact TO-226AA through-hole package, it is easy to integrate into a range of circuit boards, ensuring a stable and secure physical connection. This product is supplied on a tape and reel for automated assembly processes.

Key Specifications

_ Channel Type: N Channel _ Drain Source Voltage (Vds): 60V _ Continuous Drain Current (Id): 500mA _ Drain Source On-State Resistance (RDS(on)): 5 ohms _ Gate Source Threshold Voltage Max: 2.1V _ Power Dissipation: 830mW _ Transistor Case Style: TO-226AA _ No. of Pins: 3 _ Operating Temperature Max: 150°C _ Mounting Type: Through Hole

This component is a reliable and efficient solution for designers looking to implement high-performance switching in their low-power