ON Semiconductor Complementary N and P Channel Dual MOSFET Transistor, SuperSOT

The ON Semiconductor FDC6333C is an advanced complementary N and P-channel dual MOSFET produced using the proprietary PowerTrench® process. This technology is specifically engineered to deliver an optimal balance, minimising on-state resistance (RDS(ON)) while maintaining superior high-speed switching performance. This makes it exceptionally efficient for modern, compact electronic designs where power loss and heat generation are critical concerns.

A key advantage of this transistor is its ability to offer outstanding power dissipation within an extremely small SuperSOT footprint. This low-profile design is perfect for space-constrained applications where larger, more costly packages are not practical or feasible. It integrates high current handling and robust performance into a minimal area, maximising board space efficiency.

Key Features & Applications

This MOSFET is characterised by its low gate charge, which allows for faster switching and reduced drive circuit complexity. Its high-performance trench technology ensures extremely low RDS(ON), translating to higher efficiency and less wasted energy as heat. Primary applications include DC-to-DC converters, where efficient power conversion is vital, load switches for power management, and LCD display inverter circuits.

With its complementary channel configuration, it provides design flexibility for push-pull and other circuit topologies. The robust construction supports a wide operating temperature range, ensuring reliable performance in demanding conditions. It is an ideal choice for industrial and power management systems that require reliable, compact, and high-efficiency switching solutions.

Specifications Overview

• Process Technology: Advanced PowerTrench®
• Channel Configuration: Complementary N and P-Channel pair
• Drain-Source Voltage (Vds): 30V for both channels
• **Continuous Drain Current (Id