ON Semiconductor FDS4435BZ 30V P-Channel MOSFET SOIC-8

The FDS4435BZ from ON Semiconductor is a high-performance P-Channel PowerTrench® MOSFET designed to deliver efficient power management in a compact SOIC-8 package. Specifically engineered to minimise on-state resistance and maintain low gate charge, this device ensures superior switching performance for demanding applications. With a drain-source voltage rating of 30V and a continuous drain current of 8.8A, it provides reliable power handling for a wide range of circuits.

This MOSFET features an advanced shielded-gate structure that provides charge balance, significantly reducing the figure of merit (QG × RDS(ON)) by up to 66% compared to previous generations. The soft reverse recovery body diode helps eliminate the need for snubber circuits or higher voltage-rated MOSFETs by minimising undesirable voltage spikes in synchronous rectification. This makes it an excellent choice for AC/DC power supplies and battery-powered systems.

With an extended VGSS range of -25V, ideal for battery applications, and an HBM ESD protection level of ±3.8kV typical, this MOSFET offers robust reliability in harsh environments. Its high-performance trench technology enables extremely low on-state resistance, along with high power and current handling capability, ensuring efficient operation in compact, space-constrained designs.

The device operates with a gate-source threshold voltage of up to 2.1V and can dissipate up to 2.5W, with a maximum operating temperature of 150°C. It is suitable for surface mount assembly in SOIC-8 packages, making it easy to integrate into modern PCB designs.