ON Semiconductor FDS9926A Dual N-Channel MOSFET, 20V, 6.5A, SOIC-8

The ON Semiconductor FDS9926A is a high-performance dual N-channel PowerTrench® MOSFET, engineered to deliver superior efficiency and reliability in modern electronic circuits. This advanced 20V component is specifically designed to minimise on-state resistance while maintaining an exceptionally low gate charge, which is critical for achieving optimal switching performance and reducing power losses.

At the heart of its design is a shielded-gate structure that provides excellent charge balance. This innovative technology results in a figure of merit (FOM) that is 66% lower than previous generations, translating directly into enhanced efficiency and thermal performance for your designs. The device is further optimised with a soft reverse recovery body diode and small reverse recovery charge (Qrr), contributing to fast, clean switching—an essential characteristic for synchronous rectification in AC/DC power supplies and similar applications.

A key benefit of this soft body diode performance is its ability to minimise undesirable voltage spikes during switching. This robust performance can often eliminate the need for additional snubber circuits or the use of higher-voltage-rated MOSFETs, simplifying design and reducing overall system cost and component count.

Primary Applications

This versatile MOSFET is optimised for a wide range of uses but is particularly effective in battery protection circuits and power management systems where efficiency and compact size are paramount. Its surface-mount SOIC package makes it ideal for space-constrained PCB designs, from consumer electronics to industrial power supplies.

Key Specifications

• Technology: Advanced PowerTrench® with shielded-gate structure.
• Key Benefit: 66% lower FOM (QG x RDS(ON)) versus previous generation.
• Switching Performance: Optimised low gate charge (QG) and small reverse recovery charge (Qrr).