ON Semiconductor N-Channel MOSFET 60V 260mA SOT-23 SMD

The ON Semiconductor N-Channel MOSFET is a high-performance surface-mount power transistor designed for efficient switching and amplification in compact electronic circuits. With a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) of 260mA, it provides reliable operation for a variety of low-power applications. Its low drain-source on-state resistance (Rds(on)) of 2.5ohm at a 10V test voltage ensures minimal power loss and improved efficiency during operation.

Housed in a space-saving SOT-23 package, this MOSFET is ideal for modern, high-density PCB designs. The device features a maximum gate-source threshold voltage of 2.6V, making it compatible with standard logic-level signals from microcontrollers and other digital ICs. With a power dissipation rating of 300mW and an operating temperature range extending up to 150°C, it offers robust performance in demanding environments.

Key Features & Specifications

• Channel Type: N-Channel for common switching configurations.
• Voltage & Current Ratings: 60V Drain-Source Voltage, 260mA Continuous Drain Current.
• Low On-Resistance: 2.5ohm Rds(on) at 10V gate drive for efficient power handling.
• Package: Industry-standard SOT-23 surface-mount device (SMD).
• Logic-Level Compatible: Maximum gate threshold of 2.6V for easy interfacing.
• Robust Construction: 300mW power dissipation and a high maximum operating temperature of 150°C.
• Pin Count: 3-pin configuration for straightforward PCB layout.

This component is a fundamental building block for designers and engineers, offering a reliable and efficient solution for power management tasks in a miniature footprint.