ON Semiconductor NTR2101PT1G P-Channel MOSFET, SOT-23, 8V, 3.7A

The ON Semiconductor NTR2101PT1G is a P-channel small-signal MOSFET designed for efficient power management in compact electronic devices. With a drain-source voltage of -8V and a continuous drain current of -3.7A, this transistor delivers reliable performance for a wide range of applications.

Utilising leading Trench technology, it achieves a low drain-source on-state resistance of just 0.052Ω, ensuring high efficiency and reduced power loss. The device is rated for low-voltage gate drive at -1.8V, making it compatible with modern low-power control circuits.

Housed in a space-saving SOT-23 surface-mount package, the MOSFET occupies a minimal footprint of only 3 x 3mm, ideal for dense PCB layouts. It operates across a junction temperature range of -55°C to 150°C, ensuring stability in demanding environments.

Key Features:

• P-channel enhancement mode MOSFET
• Low RDS(on) of 0.052Ω at VGS = 4.5V
• Low gate drive requirement (1V threshold max)
• Surface-mount package for automated assembly
• Power dissipation of 960mW
• 3-pin configuration

This MOSFET is an excellent choice for power management, computing, consumer electronics, and industrial applications where space and efficiency are critical. Its robust design and high-temperature tolerance make it a dependable component for your designs.