
Compact ON Semiconductor Schottky rectifier diode, 200V 2A with low 940mV forward voltage in SOD-123FL package. Ideal for converters & portable devices.
The ON Semiconductor MBR2H200SFT1G is a compact, surface-mount Schottky power rectifier diode, engineered for applications where performance, efficiency, and space are critical. It features a robust epoxy moulded case with a cathode band for clear polarity identification, making installation straightforward and reliable.
Utilising the Schottky barrier principle with a large-area metal-to-silicon junction, this diode delivers a notably low forward voltage of just 940mV. This characteristic minimises power loss and heat generation, enhancing overall system efficiency. Its compact SOD-123FL package is ideally suited for modern electronics where reducing size and weight is paramount.
Key Applications & Uses
This rectifier is exceptionally well-suited for free-wheeling and polarity protection roles in surface-mount designs. It is a perfect component for portable and battery-powered products such as chargers, power tools, and printers, thanks to its small footprint and efficient operation. Typical circuit applications include:
Robust Design Features
Built for reliability, the device includes guarding for stress protection and can withstand a high forward surge current of 30A. It is rated for continuous operation at temperatures up to 150°C. For soldering purposes, the leads and mounting surface can tolerate a maximum temperature of 260°C for 10 seconds.
With its combination of low forward voltage, high surge capability, and a miniature surface-mount package, the MBR2H200SFT1G is an excellent choice for designers working on safety-critical systems, power management solutions, computers, peripherals, and consumer electronics.
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