ON Semiconductor SI4435DY P-Channel Power MOSFET, 30V, 8.8A, SOIC-8

The ON Semiconductor SI4435DY is a -30V P-channel PowerTrench® MOSFET, engineered to deliver exceptional efficiency in power switching applications. It achieves a remarkably low on-state resistance while maintaining minimal gate charge, resulting in superior switching performance and reduced power losses.

Utilising the latest medium-voltage PowerTrench® technology, this MOSFET is optimised as a power switch. It combines a small gate charge (QG), low reverse recovery charge (Qrr), and a soft reverse recovery body diode. This specific combination makes it ideal for fast switching in synchronous rectification circuits within AC/DC power supplies.

A key advancement is its shielded-gate structure, which provides charge balance. This advanced technology yields a FOM (figure of merit, calculated as QG x RDS(ON)) that is 66% lower than previous generations, translating to significantly enhanced efficiency. The soft body diode performance can help eliminate the need for snubber circuits or allow the replacement of higher-voltage-rated MOSFETs, as it minimises undesirable voltage spikes during synchronous rectification.

Designed for general usage, it is suitable for a wide array of applications. Its high-performance trench technology ensures an extremely low RDS(ON), enabling high power and current handling capability in a compact surface-mount package.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30 V
• Continuous Drain Current (Id): 8.8 A
• Drain-Source On-State Resistance (RDS(on)): 0.015 ohm (tested at 10V)
• Package / Case Style: SOIC (Small Outline Integrated Circuit)
• Mounting Type: Surface Mount
• Number of Pins: 8
• Gate-Source Threshold Voltage (Max): 1.7 V
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: 175°C
• Dimensions: 4.3mm (H) x 3.3mm (W) x